Chain
Gallium Precursor Chemicals
Metalorganic precursor synthesis converts high-purity gallium into trimethylgallium and related MOCVD chemicals, the form in which most gallium enters device epitaxy.
Stage diagram
MOCVD precursor synthesis is a specialized, few-plant industry; among covered jurisdictions, production is documented at high-purity metalorganics plants in Texas and the United Kingdom (Nouryon; SAFC Hitech). Precursor capacity, not gallium metal itself, is where several downstream users meet the chain.
Materials at this stage: High-Purity Gallium, Trimethylgallium (TMG)
Facility-line flow trace
| Facility / line | Location | Stage and derived state | Input → output |
|---|---|---|---|
| Indium Corporation Rome metals operation | Rome, New York | High purity refining | Crude (Low-Purity) Gallium → High-Purity Gallium |
| Indium Corporation Utica metals operation | Utica, New York | High purity refining | Crude (Low-Purity) Gallium → High-Purity Gallium |
| Kyma Technologies Raleigh gallium-nitride substrate operation | Raleigh, North Carolina | Crystal substrate | High-Purity Gallium → Gallium Nitride Bulk Crystal, Gallium Nitride Wafer |
| Nouryon La Porte high-purity metalorganics plant | La Porte, Texas | Compound chemicals | High-Purity Gallium → Trimethylgallium (TMG) |
| Freiberger Compound Materials Freiberg wafer plant | Freiberg, Saxony | Crystal substrate | High-Purity Gallium → Gallium Arsenide Bulk Crystal, Gallium Arsenide Wafer |
| Umicore Hanau metalorganic precursor plant | Hanau, Hesse | Compound chemicals | High-Purity Gallium → Trimethylgallium (TMG) |
| Sumiden Semiconductor Materials Itami substrate plant | Itami, Hyogo | Crystal substrate | High-Purity Gallium → Gallium Arsenide Bulk Crystal, Gallium Arsenide Wafer |
Sources
- Nouryon · published Jan 1, 2025 · retrieved Aug 15, 2026 · archive unavailable: Wayback capture queued at record creation 2026-08-15; archive verification deferred to a weekly pass